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INJ0203BC1 Datasheet(PDF) 3 Page - Isahaya Electronics Corporation |
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INJ0203BC1 Datasheet(HTML) 3 Page - Isahaya Electronics Corporation |
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3 / 4 page  ISAHAYA ELECTRONICS CORPORATION INJ0203BC1 Silicon P-channel MOSFET TYPICAL CHARACTERISTICS C-VDS 10 100 1000 -0.1 -1 -10 -100 Drain-Source voltage VDS (V) Ta=25℃ VGS=0V Coss Ciss t-ID 1 10 100 1000 10000 -0.01 -0.1 -1 -10 Drain current ID (A) Ta=25℃ VDD=-15V VGS=-10V RG=50Ω,PW=10us toff tf ton tr ASO -0.001 -0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 -100 Drain-Source voltage VDS (V) 1msec 1sec 100msec 10msec RDS(on) Limited ＠VGS=-8.0V DC[PD=200mW] Ta=25℃ Single Pulse package mounted on glass-epoxy substrate. (9*19*1mm) [PD=400mW] VDD=-15V Duty≦1% Input:tr,tf<10ns Common source Ta=25℃ VDS(ON） -10V 0V 90% 10% VDD 90% 10% ton toff tr tf 0 -10V 10μs Switching time test circuit Input Waveform Output Waveform IN 50Ω OUT RL VDD |
Similar Part No. - INJ0203BC1 |
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