RTBN234AP1 datasheet(1/2 Pages) ISAHAYA

Part #	RTBN234AP1

Description	TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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〈SMALL-SIGNAL TRANSISTOR〉

RTBN234AP1

TRANSISTOR WITH RESISTOR

FOR SWITHING APPLICATION

SILICON NPN EPITAXIAL TYPE

ISAHAYA ELECTRONICS CORPORATION

PRELIMINARY

Notice：This is not a final specification

Some parametric are subject to change.

DESCRIPTION

RTBN234AP1 is a one chip transistor

with built-in bias transistor.

FEATURE

・Built-in bias resistor （R1=2.2kΩ,R2=10kΩ）

・High collector current （IC=1A）

・Small package for easy mounting.

APPLICATION

Switching.

OUTLINE DRAWING

UNIT：mm

MAXIMUM RATING（Ta=25℃）

SYMBOL

PARAMETER

RATING

UNIT

V

CBO

Collector to Base voltage

80

V

EBO

Emitter to Base voltage

10

V

CEO

Collector to Emitter voltage

60

V

I

C

Collector current

1

A

I

CM

Peak collector current

2

A

P

CM

Collector dissipation(Ta=25℃)

500

mW

T

j

Junction temperature

＋150

℃

T

stg

Storage temperature

-55～＋150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

I

CBO

Collector cut off current

V

CE=60V，IE=0

―

0.1

μA

VI(on)

Input on voltage

V

CE=0.3V，IC=0.3A

―

5.0

V

VI(off)

Input off voltage

V

CE=5V，IC=100μA

0.3

―

V

ｈＦＥ1

DC forward current gain1

V

CE=2V，IC=0.1A

200

―

ｈＦＥ2

DC forward current gain2

V

CE=2V，IC=0.5A

300

―

ｈＦＥ3

DC forward current gain3

V

CE=2V，IC=1A

200

―

R1

Input resistor

―

1.54

2.2

2.86

ｋΩ

R2

Emitter-base resistor

―

7

10

13

ｋΩ

MARKING

EQUAIVALENT CIRCUIT

R1

R2

B

E

C

N

Type Name

The last number

of fisical year

Running No.

J

Marking month

電極接続

Ｅ: エミッタ

Ｃ: コレクタ

Ｂ: ベース

EIAJ : SC-62

JEDEC :

E

C

B

4.6 MAX

1.6

3.0

1.5

0.53

MAX

0.48 MAX

1.5

0.4

マーキング

TERMINAL CONNECTOR

E：EMITTER

C：COLLECTOR

B：BASE

JEDEC：―

MARKING

JEITA:SC-62

JEDEC:SOT-89

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