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SPA04N60C3 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SPA04N60C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 2 page
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2003-10-02
Page 2
SPP04N60C3, SPB04N60C3
SPA04N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
VDS = 480 V, ID = 4.5 A, Tj = 125 °C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
2.5
K/W
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
4
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=4.5A
-
700
-
Gate threshold voltage
VGS(th)
ID=200µA, VGS=VDS
2.1
3
3.9
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
-
-
0.5
-
1
50
µA
Gate-source leakage current
IGSS
VGS=30V, VDS=0V
-
-
100
nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=2.8A
Tj=25°C
Tj=150°C
-
-
0.85
2.3
0.95
-
Gate input resistance
RG
f=1MHz, open drain
-
0.95
-




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