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SPA04N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPA04N60C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 1 page
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2003-10-02
Page 1
SPP04N60C3, SPB04N60C3
SPA04N60C3
Final data
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.95
ID
4.5
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
04N60C3
04N60C3
04N60C3
Type
Package
Ordering Code
SPP04N60C3
P-TO220-3-1
Q67040-S4366
SPB04N60C3
P-TO263-3-2
Q67040-S4407
SPA04N60C3
P-TO220-3-31 Q67040-S4413
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
4.5
2.8
4.51)
2.81)
A
Pulsed drain current, tp limited by Tjmax
ID puls
13.5
13.5
A
Avalanche energy, single pulse
ID=3.4, VDD=50V
EAS
130
130
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4.5A, VDD=50V
EAR
0.4
0.4
Avalanche current, repetitive tAR limited by Tjmax
IAR
4.5
4.5
A
Gate source voltage static
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
50
31
W
SPP_B
Operating and storage temperature
Tj , Tstg
-55...+150
°C




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