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SPA04N60C3 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part No. SPA04N60C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 8 page
background image
2003-10-02
Page 8
SPP04N60C3, SPB04N60C3
SPA04N60C3
Final data
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
VSD
-1
10
0
10
1
10
2
10
A
SPP04N60C3
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
14 Typ. switching time
t = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=18Ω
0
0.5
1
1.5
2
2.5
3
3.5
A
4.5
ID
0
10
20
30
40
50
60
70
ns
90
td(off)
tf
td(on)
tr
15 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=4.5 A
0
20
40
60
80 100 120 140 160
190
RG
0
50
100
150
200
250
300
350
400
ns
500
td(off)
tf
td(on)
tr
16 Typ. drain current slope
di/dt
= f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=4.5A
0
20
40
60
80 100 120 140 160
200
RG
0
400
800
1200
1600
A/µs
2400
di/dt(on)
di/dt(off)




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