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SPP03N60C3 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part No. SPP03N60C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 4 page
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2003-10-02
Page 4
SPP03N60C3, SPB03N60C3
SPA03N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
IS
TC=25°C
-
-
3.2
A
Inverse diode direct current,
pulsed
ISM
-
-
9.6
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=420V, IF=IS ,
diF/dt=100A/µs
-
250
400
ns
Reverse recovery charge
Qrr
-
1.8
-
µC
Peak reverse recovery current
Irrm
-
15
-
A
Peak rate of fall of reverse
recovery current
dirr/dt
Tj=25°C
-
-
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
Rth1
0.054
0.054
K/W
Cth1
0.00005232 0.00005232 Ws/K
Rth2
0.103
0.103
Cth2
0.0002034
0.0002034
Rth3
0.178
0.178
Cth3
0.0002963
0.0002963
Rth4
0.757
0.356
Cth4
0.0009103
0.0009103
Rth5
0.682
0.655
Cth5
0.002084
0.004434
Rth6
0.202
2.535
Cth6
0.024
0.412
SPP_B
SPP_B
External H eatsink
Tj
Tcase
Tamb
Cth1
Cth2
R th1
Rth,n
Cth,n
Ptot (t)




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