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SPP02N80C3 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SPP02N80C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 2 page
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2003-10-14
Page 2
SPP02N80C3
SPA02N80C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
VDS = 640 V, ID = 2 A, Tj = 125 °C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
3
K/W
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
4.1
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
800
-
-
V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=2A
-
870
-
Gate threshold voltage
VGS(th)
ID=120µA, VGS=VDS
2.1
3
3.9
Zero gate voltage drain current
IDSS
VDS=800V, VGS=0V,
Tj=25°C
Tj=150°C
-
-
0.5
-
5
50
µA
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
-
100
nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=1.2A
Tj=25°C
Tj=150°C
-
-
2.4
6.5
2.7
-
Gate input resistance
RG
f=1MHz, open drain
-
0.7
-




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