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SPP02N80C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPP02N80C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 1 page
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2003-10-14
Page 1
SPP02N80C3
SPA02N80C3
Final data
Cool MOS™ Power Transistor
VDS
800
V
RDS(on)
2.7
ID
2
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
02N80C3
02N80C3
Type
Package
Ordering Code
SPP02N80C3
P-TO220-3-1
Q67040-S4432
SPA02N80C3
P-TO220-3-31 Q67040S4634
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
2
1.2
21)
1.21)
A
Pulsed drain current, tp limited by Tjmax
ID puls
6
6
A
Avalanche energy, single pulse
ID=1A, VDD=50V
EAS
90
90
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=2A, VDD=50V
EAR
0.05
0.05
Avalanche current, repetitive tAR limited by Tjmax
IAR
2
2
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
42
30.5
W
SPP
Operating and storage temperature
Tj , Tstg
-55...+150
°C




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