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SPP02N80C3 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part No. SPP02N80C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 4 page
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2003-10-14
Page 4
SPP02N80C3
SPA02N80C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
IS
TC=25°C
-
-
2
A
Inverse diode direct current,
pulsed
ISM
-
-
6
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=640V, IF=IS ,
diF/dt=100A/µs
-
520
-
ns
Reverse recovery charge
Qrr
-
2
-
µC
Peak reverse recovery current
Irrm
-
6
-
A
Peak rate of fall of reverse
recovery current
dirr/dt
Tj=25°C
-
200
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
Rth1
0.067
0.067
K/W
Cth1
0.00004221 0.00004221 Ws/K
Rth2
0.126
0.126
Cth2
0.0001651
0.0001651
Rth3
0.215
0.215
Cth3
0.0002432
0.0002432
Rth4
0.655
0.419
Cth4
0.0007613
0.0007613
Rth5
0.569
0.719
Cth5
0.002455
0.003835
Rth6
0.161
2.543
Cth6
0.412
0.412
SPP
SPP
External H eatsink
Tj
Tcase
Tamb
Cth1
Cth2
R th1
Rth,n
Cth,n
Ptot (t)




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