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SPP70N10L Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPP70N10L Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2001-08-24 Page 3 Preliminary data SPI70N10L SPP70N10L,SPB70N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=50A 30 65 - S Input capacitance Ciss VGS=0V, VDS=25V, f =1MHz - 3630 4540 pF Output capacitance Coss - 640 800 Reverse transfer capacitance Crss - 345 430 Turn-on delay time td(on) VDD=50V, VGS=4.5V, ID=70A, RG=1.3 - 70 105 ns Rise time tr - 250 375 Turn-off delay time td(off) - 250 375 Fall time tf - 95 145 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=70A - 10 15 nC Gate to drain charge Qgd - 34 51 Gate charge total Qg VDD=80V, ID=70A, VGS=0 to 10V - 160 240 Gate plateau voltage V(plateau) VDD=80V, ID=70A - 3.22 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 70 A Inverse diode direct current, pulsed ISM - - 280 Inverse diode forward voltage VSD VGS=0V, IF=140A - 1.2 1.8 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 100 150 ns Reverse recovery charge Qrr - 600 900 nC |
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