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MITSUBISHI |
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Feb.1999 23 10–1 57 100 23 5 7 101 23 5 7 102 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 0 23 102 57 103 23 5 100 23 101 57 102 23 5 7 103 23 5 7 104 102 7 5 3 2 101 7 5 3 2 7 5 3 2 10–1 VGD = 0.2V PGM = 5W VGM = 10V VGT = 1.5V IGM = 2A IRGT I IFGT I, IRGT III PG(AV) = 0.5W 101 103 7 5 3 2 –60 –20 20 102 7 5 3 2 60 100 140 4 4 –40 0 40 80 120 TYPICAL EXAMPLE 101 103 7 5 3 2 –60 –20 20 102 7 5 3 2 60 100 140 4 4 –40 0 40 80 120 IFGT I IRGT I, IRGT III TYPICAL EXAMPLE MAXIMUM ON-STATE POWER DISSIPATION RMS ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) CONDUCTION TIME (CYCLES AT 60Hz) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) CONDUCTION TIME (CYCLES AT 60Hz) 103 10–1 103 104 102 7 5 3 2 100 7 5 3 2 101 7 5 3 2 7 5 3 2 10123 5 7 23 5 7 102 105 23 5 7 23 5 7 NO FINS 16 12 6 4 2 14 10 8 0 16 0 24 8 6 101214 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS GATE CHARACTERISTICS MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |