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SPD35N10 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPD35N10 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2002-01-30 Page 1 Preliminary data SPD35N10 SIPMOS Power-Transistor Product Summary VDS 100 V RDS(on) 44 m ID 35 A Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO252 Marking 35N10 Type Package Ordering Code SPD35N10 P-TO252 Q67042-S4125 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID 35 26.4 A Pulsed drain current TC=25°C ID puls 140 Avalanche energy, single pulse ID=35 A , VDD=25V, RGS=25 EAS 245 mJ Reverse diode dv/dt IS=35A, VDS=80V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 150 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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