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SPD10N10 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SPD10N10 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 8 page SPD 10N10 Data Sheet 7 05.99 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 6 A, VGS = 10 V -60 -20 20 60 100 140 ˚C 200 Tj 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 Ω 0.75 SPD10N10 typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS, ID = 1 mA -60 -20 20 60 100 ˚C 160 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 min typ max Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 1 10 2 10 3 10 4 10 pF Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD -1 10 0 10 1 10 2 10 A SPD10N10 T j = 25 ˚C typ T j = 25 ˚C (98%) T j = 150 ˚C typ T j = 150 ˚C (98%) |
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Similar Description - SPD10N10 |
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