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SPD07N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPD07N60C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 1 page
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2003-09-16
Page 1
SPD07N60C3
SPU07N60C3
Final data
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.6
ID
7.3
A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO252-3-1
P-TO251-3-1
Type
Package
Ordering Code
SPD07N60C3
P-TO252-3-1
Q67040-S4423
SPU07N60C3
P-TO251-3-1
-
Marking
07N60C3
07N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
7.3
4.6
A
Pulsed drain current, tp limited by Tjmax
ID puls
21.9
Avalanche energy, single pulse
ID = 5.5 A, VDD = 50 V
EAS
230
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID = 7.3 A, VDD = 50 V
EAR
0.5
Avalanche current, repetitive tAR limited by Tjmax IAR
7.3
A
Reverse diode dv/dt
IS=7.3A, VDS=480V, Tj=125°C
dv/dt
6
V/ns
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
83
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C




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