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SPD04N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPD04N60C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 1 page
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2003-10-02
Page 1
SPD04N60C3
SPU04N60C3
Final data
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.95
ID
4.5
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO252
P-TO251
Type
Package
Ordering Code
SPD04N60C3
P-TO252
Q67040-S4412
SPU04N60C3
P-TO251
-
Marking
04N60C3
04N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
4.5
2.8
A
Pulsed drain current, tp limited by Tjmax
ID puls
13.5
Avalanche energy, single pulse
ID = 3.4 A, VDD = 50 V
EAS
130
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID = 4.5 A, VDD = 50 V
EAR
0.4
Avalanche current, repetitive tAR limited by Tjmax IAR
4.5
A
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
50
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C




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