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SPD03N60C3 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part No. SPD03N60C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 3 page
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2003-10-02
Page 3
SPD03N60C3
SPU03N60C3
Final data
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
ID=2A
-
3.4
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f
=1MHz
-
400
-
pF
Output capacitance
Coss
-
150
-
Reverse transfer capacitance
Crss
-
5
-
Effective output capacitance,3)
energy related
Co(er)
VGS=0V,
VDS=0V to 480V
-
12
-
pF
Effective output capacitance,4)
time related
Co(tr)
-
26
-
Turn-on delay time
td(on)
VDD=350V, VGS=0/10V,
ID=3.2A, RG=20Ω
-
7
-
ns
Rise time
tr
-
3
-
Turn-off delay time
td(off)
-
64
100
Fall time
tf
-
12
20
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=420V, ID=3.2A
-
2
-
nC
Gate to drain charge
Qgd
-
6
-
Gate charge total
Qg
VDD=420V, ID=3.2A,
VGS=0 to 10V
-
13
17
Gate plateau voltage
V(plateau) VDD=420V, ID=3.2A
-
5.5
-
V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS.
4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.




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