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SPD03N50C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPD03N50C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 1 page
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2003-10-07
Page 1
SPD03N50C3
Final data
Cool MOS™ Power Transistor
VDS @ Tjmax
560
V
RDS(on)
1.4
ID
3.2
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO252-3-1
Type
Package
Ordering Code
SPD03N50C3
P-TO252-3-1
Q67040-S4571
Marking
03N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
3.2
2
A
Pulsed drain current, tp limited by Tjmax
ID puls
9.6
Avalanche energy, single pulse
ID = 2.4 A, VDD = 50 V
EAS
100
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID = 3.2 A, VDD = 50 V
EAR
0.2
Avalanche current, repetitive tAR limited by Tjmax IAR
3.2
A
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
38
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C




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