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SPD02N50C3 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part No. SPD02N50C3
Description  Cool MOS Power Transistor
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 4 page
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2003-10-07
Page 4
SPD02N50C3
Final data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
IS
TC=25°C
-
-
1.8
A
Inverse diode direct current,
pulsed
ISM
-
-
5.4
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=400V, IF=IS ,
diF/dt=100A/µs
-
180
-
ns
Reverse recovery charge
Qrr
-
1.2
-
µC
Peak reverse recovery current
Irrm
-
8
-
A
Peak rate of fall of reverse
recovery current
dirr/dt
-
200
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
Rth1
0.1
K/W
Rth2
0.184
Rth3
0.306
Rth4
1.207
Rth5
0.974
Rth6
0.251
Thermal capacitance
Cth1
0.00002806
Ws/K
Cth2
0.0001113
Cth3
0.0001679
Cth4
0.000547
Cth5
0.001388
Cth6
0.019
External H eatsink
Tj
Tcase
Tamb
Cth1
Cth2
R th1
Rth,n
Cth,n
Ptot (t)




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