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CPM2-1200-0040B Datasheet(PDF) 5 Page - Cree, Inc

Part # CPM2-1200-0040B
Description  Silicon Carbide Power MOSFET C2M MOSFET Technology
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

CPM2-1200-0040B Datasheet(HTML) 5 Page - Cree, Inc

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5
CPM2-1200-0040B Rev. B
1
10
100
1000
10000
0
50
100
150
200
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Crss
Typical Performance
-100
-80
-60
-40
-20
0
-6
-5
-4
-3
-2
-1
0
Drain-Source Voltage, VDS (V)
Conditions:
TJ = -55 °C
tp < 200 µs
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
-100
-80
-60
-40
-20
0
-6
-5
-4
-3
-2
-1
0
Drain-Source Voltage, VDS (V)
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
-100
-80
-60
-40
-20
0
-6
-5
-4
-3
-2
-1
0
Drain-Source Voltage, VDS (V)
Conditions:
TJ = 150 °C
tp < 200 µs
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
0
20
40
60
80
100
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
1
10
100
1000
10000
0
200
400
600
800
1000
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Crss
Figure 13. 3rd Quadrant Characteristic at -55 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
Figure 17. Capacitances vs. Drain-Source
Voltage(0-200V)
Figure 18. Capacitances vs. Drain-Source
Voltage(0-1000V)


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