CPM2-1200-0025B datasheet(6/7 Pages) CREE

Part #	CPM2-1200-0025B

Description	Silicon Carbide Power MOSFET C2M MOSFET Technology

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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6

CPM2-1200-0025B Rev. C, 01-2016

Parameter

Typical Value

Unit

Die Dimensions (L x W)

4.04 x 6.44

mm

Exposed Source Pad Metal Dimensions (LxW) Each

1.0 x 4.54 (x3)

mm

Gate Pad Dimensions (L x W)

0.50 x 0.80

mm

Die Thickness

180 ± 40

µm

Top Side Source metallization (Al)

4

µm

Top Side Gate metallization (Al)

4

µm

Bottom Drain metallization (Ni/Ag)

0.8 / 0.6

µm

Chip Dimensions

Mechanical Parameters

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