3

CMPA5585025F Rev 4.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific

product and/or vendor endorsement, sponsorship or association.

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

Power Added Efficiency

PAE1

24.5

30.0

–

%

V

Frequency = 5.8 GHz

Power Added Efficiency

PAE2

16.5

20.5

–

%

V

Frequency = 7.2 GHz

Power Added Efficiency

PAE3

15.5

19.0

–

%

V

Frequency = 7.9 GHz

Power Added Efficiency

PAE4

15.0

19.5

–

%

V

Frequency = 8.4 GHz

Power Gain

G

P1

19.5

21.7

–

dB

V

Frequency = 5.8 GHz

Power Gain

G

P2

16.25

17.2

–

dB

V

Frequency = 7.2 GHz

Power Gain

G

P3

16.55

18.5

–

dB

V

Frequency = 7.9 GHz

Power Gain

G

P4

16.75

18.6

–

dB

V

Frequency = 8.4 GHz

OQPSK Linearity

ACLR1

–

-36

–27.0

dB

V

Frequency = 5.8 GHz

OQPSK Linearity

ACLR2

–

-36

–28.5

dB

V

Frequency = 7.2 GHz

OQPSK Linearity

ACLR3

–

-36

–26.0

dB

V

Frequency = 7.9 GHz

OQPSK Linearity

ACLR4

–

-42

–32.5

dB

V

Frequency = 8.4 GHz

Notes:

1

Measured in the CMPA5585025F-AMP

2

Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2.

3

Measured at P

4

Fixture loss de-embedded.

Electrostatic Discharge (ESD) Classifications

Parameter

Symbol

Class

Test Methodology

Human Body Model

HBM

1A (> 250 V)

JEDEC JESD22 A114-D

Charge Device Model

CDM

II (200 < 500 V)

JEDEC JESD22 C101-C