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SMBTA06UPN Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SMBTA06UPN
Description  NPN/PNP Silicon AF Transistor Array
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 2 page
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SMBTA06UPN
2
Aug-21-2002
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
80
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO
80
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
4
-
-
Collector cutoff current
VCB = 80 V, IE = 0
ICBO
-
-
100
nA
Collector cutoff current
VCB = 80 V, IE = 0 , TA = 150 °C
ICBO
-
-
20
µA
Collector cutoff current
VCE = 60 V, IB = 0
ICEO
-
-
100
nA
DC current gain 1)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
100
100
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
VCEsat
-
-
0.25
V
Base-emitter voltage 1)
IC = 100 mA, VCE = 1 V
VBE(ON)
-
-
1.2
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
-
100
-
MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
12
-
pF
1) Pulse test: t
300µs, D = 2%




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