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SMBT3904UPN Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SMBT3904UPN Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 7 page  SMBT3904UPN Aug-21-2002 2 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 40 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 40 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 30 V, IE = 0 ICBO - - 50 nA DC current gain 1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE 40 70 100 60 30 - - - - - - - 300 - - - Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat - - - - 0.25 0.4 V Base-emitter saturation voltage 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat 0.65 - - - 0.85 0.95 1) Pulse test: t < 300 s; D < 2% |
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