DRV8804DW datasheet(5/27 Pages) TI1

Part #	DRV8804DW

Description	Quad Serial Interface Low-Side Driver IC

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Manufacturer	TI1 [Texas Instruments]

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5 / 27 page

DRV8804

www.ti.com

SLVSAW4F – JULY 2011 – REVISED DECEMBER 2015

Thermal Information (continued)

DRV8804

THERMAL METRIC(1)

DW (SOIC)

PWP (HTSSOP)

UNIT

20 PINS

16 PINS

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

2.3

°C/W

6.5 Electrical Characteristics

TA = 25°C, over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLIES

IVM

VM operating supply current

VM = 24 V

1.6

2.1

mA

VUVLO

VM undervoltage lockout voltage

VM rising

8.2

V

LOGIC-LEVEL INPUTS (SCHMITT TRIGGER INPUTS WITH HYSTERESIS)

VIL

Input low voltage

0.6

0.7

V

VIH

Input high voltage

2

V

VHYS

Input hysteresis

0.45

V

IIL

Input low current

VIN = 0

–20

20

μA

IIH

Input high current

VIN = 3.3 V

100

μA

RPD

Pulldown resistance

100

k

Ω

nFAULT OUTPUT (OPEN-DRAIN OUTPUT)

VOL

Output low voltage

IO = 5 mA

0.5

V

IOH

Output high leakage current

VO = 3.3 V

1

μA

SDATOUT OUTPUT (PUSH-PULL OUTPUT)

VOL

Output low voltage

IO = 5 mA

0.5

V

IO = 100 µA, VM = 11 V - 60 V, peak

6.5

VOH

Output high voltage

IO = 100 µA, VM = 11 V - 60 V, steady state

3.3

4.5

5.6

V

IO = 100 µA, VM = 8.2 V - 11 V, steady state

2.5

ISRC

Output source current

VM = 24 V

1

mA

ISNK

Output sink current

VM = 24 V

5

mA

LOW-SIDE FETS

VM = 24 V, IO = 700 mA, TJ = 25°C

0.5

RDS(ON)

FET on resistance

Ω

VM = 24 V, IO = 700 mA, TJ = 85°C

0.75

0.8

IOFF

Off-state leakage current

–50

50

μA

HIGH-SIDE DIODES

VF

Diode forward voltage

VM = 24 V, IO = 700 mA, TJ = 25°C

1.2

V

IOFF

Off-state leakage current

VM = 24 V, TJ = 25°C

–50

50

μA

OUTPUTS

tR

Rise time

VM = 24 V, IO = 700 mA, Resistive load

50

300

ns

tF

Fall time

VM = 24 V, IO = 700 mA, Resistive load

50

300

ns

PROTECTION CIRCUITS

IOCP

Overcurrent protection trip level

2.3

3.8

A

tOCP

Overcurrent protection deglitch time

3.5

µs

tRETRY

Overcurrent protection retry time

1.2

ms

tTSD

Thermal shutdown temperature

Die temperature(1)

150

160

180

°C

(1)

Not production tested.

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