3

CGHV40100 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are

registered trademarks of Cree, Inc.

CGHV40100 Typical Performance

Figure 1. - Small Signal Gain and Return Losses versus Frequency measured in

application circuit CGHV40100-AMP

V

Figure 2. - Output Power and Drain Efficiency vs Frequency

V

22

24

26

28

30

32

34

36

38

54

56

58

60

62

64

66

68

70

CGHV40100F in Applications Circuit

Vdd = 50 V, Idq = 600 mA, Tcase = 25°C

CW @ Psat

Output Power

Drain Efficiency

Gain

8

10

12

14

16

18

20

22

40

42

44

46

48

50

52

54

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

2.75

Frequency (GHz)

Drain Efficiency

Output Power

Gain

4

8

12

16

20

24

Small Signal S-parameters

CGHV40100F in Applications Circuit

Vdd = 50 V, Idq = 600 mA, Tcase = 25°C

S11

S21

S22

-16

-12

-8

-4

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Frequency (GHz)