1

Subject to change without notice.

www.cree.com/RF

CGHV27030S

30 W, DC - 6.0 GHz, GaN HEMT

T

heCGHV27030Sisanunmatched,galliumnitride(GaN)highelectronmobilitytransistor(HEMT)

which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN

HEMT devices are ideal for telecommunications applications with frequencies of 700-960

MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V

and 28 V operations. The CGHV27030S is also ideal for tactical communications applications

operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band

RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a

3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Features for 50 V in CGHV27030S-AMP1

AVE

AVE

AVE

Parameter

2.5 GHz

2.6 GHz

2.7 GHz

Units

Small Signal Gain

23.0

22.0

21.4

dB

Adjacent Channel Power @ P

-34.5

-36.5

-37.0

dBc

Drain Efficiency @ P

29.5

31.5

32.9

%

Input Return Loss

13.4

9.5

10.4

dB

Note:

Measured in the CGHV27030S-AMP1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.

Listing of Available Hardware Application Circuits / Demonstration Circuits

Application Circuit

Operating Frequency

Amplifier Class

Operating Voltage

CGHV27030S-AMP1

2.5 - 2.7 GHz

Class A/B

50 V

CGHV27030S-AMP2

2.5 - 2.7 GHz

Class A/B

28 V

CGHV27030S-AMP3

1.8 - 2.2 GHz

Class A/B

28 V

CGHV27030S-AMP4

1.8 - 2.2 GHz

Class A/B

50 V

CGHV27030S-AMP5

1.2 - 1.4 GHz

Class A/B

50 V

Package Type: 3x4 DFN

PN: CGHV27030S