CGHV22100-TB datasheet(5/11 Pages) CREE

Part #	CGHV22100-TB

Description	100 W, 1800-2200 MHz, GaN HEMT for LTE

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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5 / 11 page

5

CGHV22100 Rev 2.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Source and Load Impedances

Frequency (MHz)

Z Source

Z Load

1800

4.50 + j0.91

5.21 - j2.58

1900

5.20 + j1.15

5.01 - j2.09

2000

6.02 + j1.03

4.85 - j1.61

2100

6.75 + j0.42

4.70 - j1.12

2200

7.03 - j0.64

4.58 - j0.62

Note1: V

DD = 50 V, IDQ = 0.5 A. In the 440162 package.

Note2: Impedances are extracted from CGHV22100-AMP demonstration circuit

and are not source and load pull data derived from transistor.

Electrostatic Discharge (ESD) Classifications

Parameter

Symbol

Class

Test Methodology

Human Body Model

HBM

1A (> 250 V)

JEDEC JESD22 A114-D

Charge Device Model

CDM

2 (125 V to 250 V)

JEDEC JESD22 C101-C

D

Z Source

Z Load

G

S

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