1

Subject to change without notice.

www.cree.com/rf

CGHV22100

100 W, 1800-2200 MHz, GaN HEMT for LTE

Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

is designed specifically for high efficiency, high gain and wide bandwidth capabilities,

which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA

amplifier applications. The transistor is input matched and supplied in a ceramic/

metal flange package.

Package Type: 440162 and 440161

PN: CGHV22100F and CGHV22100P

Features

• 1.8 - 2.2 GHz Operation

• 20 dB Gain

• -35 dBc ACLR at 25 W P

AVE

• 31-35 % Efficiency at 25 W P

AVE

• High Degree of DPD Correction Can be Applied

Parameter

1.8 GHz

2.0 GHz

2.2 GHz

Units

Gain @ 44 dBm

18.7

20.7

22.0

dB

ACLR @ 44 dBm

-37.8

-37.1

-35.1

dBc

Drain Efficiency @ 44 dBm

35.4

31.7

30.6

%

Note:

Measured in the CGHV22100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF.