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CGHV1J070D Datasheet(PDF) 1 Page - Cree, Inc |
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CGHV1J070D Datasheet(HTML) 1 Page - Cree, Inc |
1 / 9 page 1 Subject to change without notice. www.cree.com/rf CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. FEATURES • 17 dB Typ. Small Signal Gain at 10 GHz • 60% Typ. PAE at 10 GHz • 70 W Typical Psat • 40 V Operation • Up to 18GHz Operation APPLICATIONS • Satellite Communications • PTP Communications Links • Marine Radar • Pleasure Craft Radar • Port Vessel Traffic Services • Broadband Amplifiers • High Efficiency Amplifiers Packaging Information • Bare die are shipped in Gel-Pak® containers or on tape. • Non-adhesive tacky membrane immobilizes die during shipment. PN: CGHV1J070D |
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