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Subject to change without notice.

www.cree.com/rf

CGH40045

45 W, RF Power GaN HEMT

Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities

making the CGH40045 ideal for linear and compressed amplifier circuits. The

transistor is available in a flange and pill package.

FEATURES

• Up to 4 GHz Operation

• 16 dB Small Signal Gain at 2.0 GHz

• 12 dB Small Signal Gain at 4.0 GHz

• 55 W Typical P

SAT

• 55 % Efficiency at P

SAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

Package Types: 440193 & 440206

PN’s: CGH40045F & CGH40045P