1

Subject to change without notice.

www.cree.com/rf

CGH35060F2 / CGH35060P2

60 W, 3100-3500 MHz, 28V, GaN HEMT

Cree’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor

(HEMT) designed specifically for high efficiency, high gain and wide bandwidth

capabilities, which makes the CGH35060F2 / P2 ideal for 3.1-3.5 GHz S-band pulsed

amplifier applications. The transistor is supplied in a ceramic/metal flange and pill

package.

Package Type: 440193 & 440206

PN: CGH35060F2 & CGH35060P2

Features

• 3.1 - 3.5 GHz Operation

•

60 W Peak Power Capability

• 12 dB Small Signal Gain

• 60 % Drain Efficiency

Parameter

3.1 GHz

3.3 GHz

3.5 GHz

Units

Small Signal Gain

12.0

13.2

11.5

dB

P

47.0

47.6

46.7

dBm

P

10.4

11.06

10.1

dBm

Drain Efficiency @ P

55.0

62.0

62.0

%

Input Return Loss

-7.3

-17.0

-4.3

dB

Note:

Measured in the CGH35060F2-AMP1 amplifier circuit, under 100 µsec Pulse Width, 20% Duty Cycle and 28 V.