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CGH35015F-AMP Datasheet(PDF) 2 Page - Cree, Inc

Part # CGH35015F-AMP
Description  15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

CGH35015F-AMP Datasheet(HTML) 2 Page - Cree, Inc

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CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
V
DSS
84
Volts
25˚C
Gate-to-Source Voltage
V
GS
-10, +2
Volts
25˚C
Power Dissipation
P
DISS
7
Watts
Storage Temperature
T
STG
-65, +150
˚C
Operating Junction Temperature
T
J
225
˚C
Maximum Forward Gate Current
I
GMAX
4.0
mA
25˚C
Maximum Drain Current1
I
DMAX
1.5
A
25˚C
Soldering Temperature2
T
S
245
˚C
Screw Torque
τ
60
in-oz
Thermal Resistance, Junction to Case3
R
θ
JC
8.0
˚C/W
85˚C
Case Operating Temperature3
T
C
-40, +150
˚C
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH35015F at P
DISS = 7 W.
Electrical Characteristics (T
C = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
V
GS(th)
-3.8
-3.0
-2.3
V
DC
V
DS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
V
GS(Q)
-2.7
V
DC
V
DS = 28 V, ID = 60 mA
Saturated Drain Current
I
DS
2.9
3.5
A
V
DS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
V
(BR)DSS
120
V
DC
V
GS = -8 V, ID = 3.6 mA
RF Characteristics2,3 (T
C = 25˚C, F0 = 3.5 GHz unless otherwise noted)
Small Signal Gain
G
SS
10.5
12
dB
V
DD = 28 V, IDQ = 100 mA
Drain Efficiency4
η
22
26
%
V
DD = 28 V, IDQ = 100 mA, PAVE = 2.0 W
Back-Off Error Vector Magnitude
EVM
1
2.5
%
V
DD = 28 V, IDQ = 100 mA,
P
AVE = 18 dBm
Error Vector Magnitude
EVM
2
2.5
%
V
DD = 28 V, IDQ = 100 mA, PAVE = 2.0 W
Output Mismatch Stress
VSWR
10 : 1
Y
No damage at all phase angles,
V
DD = 28 V, IDQ = 100 mA,
P
AVE = 2.0 W
Dynamic Characteristics
Input Capacitance
C
GS
4.5
pF
V
DS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
C
DS
1.3
pF
V
DS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
C
GD
0.2
pF
V
DS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH35015F-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = P
OUT / PDC.


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