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CGH35015F-AMP Datasheet(PDF) 2 Page - Cree, Inc |
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CGH35015F-AMP Datasheet(HTML) 2 Page - Cree, Inc |
2 / 12 page 2 CGH35015 Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V DSS 84 Volts 25˚C Gate-to-Source Voltage V GS -10, +2 Volts 25˚C Power Dissipation P DISS 7 Watts Storage Temperature T STG -65, +150 ˚C Operating Junction Temperature T J 225 ˚C Maximum Forward Gate Current I GMAX 4.0 mA 25˚C Maximum Drain Current1 I DMAX 1.5 A 25˚C Soldering Temperature2 T S 245 ˚C Screw Torque τ 60 in-oz Thermal Resistance, Junction to Case3 R θ JC 8.0 ˚C/W 85˚C Case Operating Temperature3 T C -40, +150 ˚C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH35015F at P DISS = 7 W. Electrical Characteristics (T C = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V GS(th) -3.8 -3.0 -2.3 V DC V DS = 10 V, ID = 3.6 mA Gate Quiescent Voltage V GS(Q) – -2.7 – V DC V DS = 28 V, ID = 60 mA Saturated Drain Current I DS 2.9 3.5 – A V DS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage V (BR)DSS 120 – – V DC V GS = -8 V, ID = 3.6 mA RF Characteristics2,3 (T C = 25˚C, F0 = 3.5 GHz unless otherwise noted) Small Signal Gain G SS 10.5 12 – dB V DD = 28 V, IDQ = 100 mA Drain Efficiency4 η 22 26 – % V DD = 28 V, IDQ = 100 mA, PAVE = 2.0 W Back-Off Error Vector Magnitude EVM 1 – 2.5 – % V DD = 28 V, IDQ = 100 mA, P AVE = 18 dBm Error Vector Magnitude EVM 2 – 2.5 – % V DD = 28 V, IDQ = 100 mA, PAVE = 2.0 W Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, V DD = 28 V, IDQ = 100 mA, P AVE = 2.0 W Dynamic Characteristics Input Capacitance C GS – 4.5 – pF V DS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance C DS – 1.3 – pF V DS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance C GD – 0.2 – pF V DS = 28 V, Vgs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35015F-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 4 Drain Efficiency = P OUT / PDC. |
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