CAS120M12BM2 datasheet(6/9 Pages) CREE

Part #	CAS120M12BM2

Description	Half-Bridge Module

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CAS120M12BM2,Rev. -

Typical Performance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

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80

120

160

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240

Drain to Source Current, IDS (A)

EOff

EOn

ETotal

Conditions:

TJ = 25 °C

VDD = 600 V

RG(ext) = 2.5 Ω

VGS = -5/+20 V

L = 142 μH

Figure19.InductiveSwitchingEnergyvs.

DrainCurrentForV

DS=600V,RG=2.5Ω

Figure20.InductiveSwitchingEnergyvs.

DrainCurrentForV

DS=800V,RG=2.5Ω

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External Gate Resistor RG(ext) (Ohms)

EOff

EOn

ETotal

Conditions:

TJ = 25 °C

VDD = 600 V

IDS =120 A

VGS = -5/+20 V

L = 142 μH

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

0

40

80

120

160

200

240

Drain to Source Current, IDS (A)

EOff

EOn

ETotal

Conditions:

TJ = 25 °C

VDD = 800 V

RG(ext) = 2.5 Ω

VGS = -5/+20 V

L = 142 μH

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

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175

Junction Temperature, TJ (°C)

EOff

EOn

ETotal

Conditions:

VDD = 600 V

RG(ext) = 2.5 Ω

IDS =120 A

VGS = -5/+20 V

L = 142 μH

Figure22.InductiveSwitchingEnergyvs.Temperature

Figure21.InductiveSwitchingEnergyvs.R

G(ext)

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External Gate Resistor, RG(ext) (Ohms)

Conditions:

TJ = 25 °C

VDD = 600 V

IDS = 120 A

VGS = -5/+20 V

td (off)

td (on)

tf

tr

Figure23.Timingvs.R

G(ext)

Figure24.ResistiveSwitchingTimeDescription

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CAS120M12BM2 Datasheet(PDF) 6 Page - Cree, Inc

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