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C505RT230-S0100 Datasheet(PDF) 2 Page - Cree, Inc

Part # C505RT230-S0100
Description  Low Forward Voltage 2.9 V Typical at 5 mA
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

C505RT230-S0100 Datasheet(HTML) 2 Page - Cree, Inc

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Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
2
CPR3CN Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Maximum Ratings at T
A = 25°C
Notes 1&3
CxxxRT230-S0100
DCForwardCurrent
30mA
PeakForwardCurrent(1/10dutycycle@1kHz)
100mA
LEDJunctionTemperature
125°C
ReverseVoltage
5V
OperatingTemperatureRange
-40°Cto+100°C
StorageTemperatureRange
-40°Cto+100°C
ElectrostaticDischargeThreshold(HBM)Note2
1000V
ElectrostaticDischargeClassification(MIL-STD-883E)Note2
Class2
Typical Electrical/Optical Characteristics at T
A = 25°C, If = 5mA
Note 3
Part Number
Forward Voltage (V
f, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
D, nm)
Min.
Typ.
Max.
Max.
Typ.
C460RT230-S0100
2.6
2.9
3.2
2
21
C470RT230-S0100
2.6
2.9
3.2
2
22
C505RT230-S0100
2.6
2.9
3.2
2
30
C527RT230-S0100
2.6
2.9
3.2
2
35
Mechanical Specifications
CxxxRT230-S0100
Description
Dimension
Tolerance
P-NJunctionArea(μm)
176x176
±25
TopArea(μm)
200x200
±25
BottomArea(μm)
200x200
±25
ChipThickness(μm)
85
±10
AuBondPadDiameter(μm)
105
-5,+15
AuBondPadThickness(μm)
1.2
±0.5
BackContactMetalArea(μm)
80x80
±25
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy)forcharacterization.Ratingsforotherpackagesmaydiffer.Theforwardcurrents(DCandPeak)arenotlimitedbythedie
butbytheeffectoftheLEDjunctiontemperatureonthepackage.Thejunctiontemperaturelimitof125°CisalimitoftheT-1
3/4package;junctiontemperatureshouldbecharacterizedinaspecificpackagetodeterminelimitations.Assemblyprocessing
temperaturemustnotexceed325°C(<5seconds).
2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche
energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.TheRAETprocedureis
performedoneachdie.TheESDclassificationofClass2isbasedonsampletestingaccordingtoMIL-STD-883E.
3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembled
andoperatedat5mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgiven
arewithintherangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.All
measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxy).Opticalcharacteristicsmeasuredinan
integratingsphereusingIlluminanceE.
4. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
5. Specificationsaresubjecttochangewithoutnotice.


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