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C460MB290-S0800 Datasheet(PDF) 2 Page - Cree, Inc

Part # C460MB290-S0800
Description  Low Forward Voltage 3.2 V Typical at 20 mA
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

C460MB290-S0800 Datasheet(HTML) 2 Page - Cree, Inc

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© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of
Henkel Corporation.
2
CPR3CK Rev. D (201410)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Maximum Ratings at T
A = 25°C
Notes 1&3
CxxxMB290-Sxx00
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
LED Chip Storage Temperature
-40°C to +120°C
Recommended Die Sheet Storage Conditions
≤30°C / ≤85% RH
Electrostatic Discharge Threshold (HBM)Note 2
1000 V
Electrostatic Discharge Classification (MIL-STD-883E)Note 2
Class 2
Typical Electrical/Optical Characteristics at T
A = 25°C, If = 20 mA
Note 3
Part Number
Forward Voltage (V
f, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
D, nm)
Min.
Typ.
Max.
Max.
Typ.
C460MB290-Sxxxx
2.9
3.2
3.7
2
21
C470MB290-Sxxxx
2.9
3.2
3.7
2
22
C527MB290-Sxxxx
2.9
3.3
3.9
2
35
Mechanical Specifications
CxxxMB290-Sxx00
Description
Dimension
Tolerance
P-N Junction Area (μm)
250 x 250
± 25
Top Area (μm)
300 x 300
± 25
Chip Thickness (μm)
250
± 25
Bottom Area (μm)
200 x 200
± 25
Au Bond Pad Diameter (μm)
112
± 20
Au Bond Pad Thickness (μm)
1.2
± 0.5
Backside Metal Diameter (μm)
104
± 20
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a thru-hole package (with Hysol® OS4000
encapsulant) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by
the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of
the thru-hole package; junction temperature should be characterized in a specific package to determine limitations. Assembly
processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are performed on each die and are designed to approximate the minimum ESD ratings
shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in thru-hole packages (with Hysol OS4000 encapsulant). The amount of die attach
adhesive used will affect light output; it is recommended that the adhesive amount be optimized to meet the requirements of each
specific application. Optical characteristics measured in an integrating sphere using Illuminance E.
4. To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 μm.
5. Specifications are subject to change without notice.


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