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C460MB290-S0800 Datasheet(PDF) 2 Page - Cree, Inc |
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C460MB290-S0800 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 5 page © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and MegaBright® are registered trademarks, and MB™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 2 CPR3CK Rev. D (201410) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Maximum Ratings at T A = 25°C Notes 1&3 CxxxMB290-Sxx00 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Electrostatic Discharge Threshold (HBM)Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Class 2 Typical Electrical/Optical Characteristics at T A = 25°C, If = 20 mA Note 3 Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max. (λ D, nm) Min. Typ. Max. Max. Typ. C460MB290-Sxxxx 2.9 3.2 3.7 2 21 C470MB290-Sxxxx 2.9 3.2 3.7 2 22 C527MB290-Sxxxx 2.9 3.3 3.9 2 35 Mechanical Specifications CxxxMB290-Sxx00 Description Dimension Tolerance P-N Junction Area (μm) 250 x 250 ± 25 Top Area (μm) 300 x 300 ± 25 Chip Thickness (μm) 250 ± 25 Bottom Area (μm) 200 x 200 ± 25 Au Bond Pad Diameter (μm) 112 ± 20 Au Bond Pad Thickness (μm) 1.2 ± 0.5 Backside Metal Diameter (μm) 104 ± 20 Notes: 1. Maximum ratings are package dependent. The above ratings were determined using a thru-hole package (with Hysol® OS4000 encapsulant) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the thru-hole package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are performed on each die and are designed to approximate the minimum ESD ratings shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in thru-hole packages (with Hysol OS4000 encapsulant). The amount of die attach adhesive used will affect light output; it is recommended that the adhesive amount be optimized to meet the requirements of each specific application. Optical characteristics measured in an integrating sphere using Illuminance E. 4. To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 μm. 5. Specifications are subject to change without notice. |
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