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SEMH4 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SEMH4
Description  NPN Silicon Digital Transistor Array Preliminary data
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 2 page
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SEMH4
Feb-25-2004
2
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO
50
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO
50
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector cutoff current
VCB = 40 V, IE = 0
ICBO
-
-
100
nA
DC current gain 1)
IC = 5 mA, VCE = 5 V
hFE
120
-
630
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat
-
-
0.3
V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.4
-
1
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Vi(on)
0.5
-
1.1
Input resistor
R1
7
10
13
k
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT
-
150
-
MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
3
-
pF
1) Pulse test: t < 300
µs; D < 2%




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