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SEMH1 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SEMH1
Description  NPN Silicon Digital Transistor Array Preliminary data
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SEMH1
Feb-25-2004
1
NPN Silicon Digital Transistor Array
Preliminary data
• Switching circuit, inverter, interface circuit,
driver circuit
• Two ( galvanic) internal isolated Transistors
with good matching in one package
• Built in bias resistor (R1=22kΩ, R2=22kΩ)
1
3
6
5
4
2
EHA07174
6
54
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R 2
R1
R 2
TR1
TR2
Type
Marking
Pin Configuration
Package
SEMH1
WD
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
50
V
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
10
Input on Voltage
Vi(on)
30
DC collector current
IC
100
mA
Total power dissipation
, TS = 75 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
≤ 300
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance




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