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C3M0280090J Datasheet(PDF) 2 Page - Cree, Inc |
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C3M0280090J Datasheet(HTML) 2 Page - Cree, Inc |
2 / 10 page 2 C3M0280090J Rev. - , 12-2015 Electrical Characteristics (T C=25˚Cunlessotherwisespecified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID=100μA VGS(th) Gate Threshold Voltage 1.8 2.1 3.5 V VDS = VGS, ID = 1.2 mA Fig. 11 1.6 V VDS = VGS, ID = 1.2 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 280 360 mΩ VGS = 15 V, ID = 7.5 A Fig. 4, 5, 6 385 VGS = 15 V, ID = 7.5 A, TJ = 150ºC gfs Transconductance 3.6 S VDS= 15 V, IDS= 7.5 A Fig. 7 3.1 VDS= 15 V, IDS= 7.5 A, TJ = 150ºC Ciss Input Capacitance 150 pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18 Coss Output Capacitance 20 Crss Reverse Transfer Capacitance 2 Eoss Coss Stored Energy 4.5 μJ Fig. 16 EON Turn-On Switching Energy 19 μJ VDS = 400 V, VGS = -4 V/15 V, I D = 7.5 A, R G(ext) =2.5Ω,L=220μH,TJ = 150ºC Fig. 26, 29 Note(3) EOFF Turn Off Switching Energy 3.7 td(on) Turn-On Delay Time 10.5 ns VDD = 400 V, VGS = -4 V/15 V ID = 7.5 A, RG(ext)=2.5Ω, Timing relative to V DS Inductive load Fig. 27, 29 Note(3) tr Rise Time 6.5 td(off) Turn-Off Delay Time 11 tf Fall Time 4 RG(int) Internal Gate Resistance 26 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 2.8 nC VDS = 400 V, VGS = -4 V/15 V ID = 7.5 A Per IEC60747-8-4 pg 21 Fig. 12 Qgd Gate to Drain Charge 3.4 Qg Total Gate Charge 9.5 Reverse Diode Characteristics (T C=25˚Cunlessotherwisespecified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.8 V V GS = -4 V, ISD = 4 A Fig. 8, 9, 10 4.4 V V GS = -4 V, ISD = 4 A, TJ = 150 °C IS Continuous Diode Forward Current 9 A V GS = -4 V Note (2) IS, pulse Diode pulse Current 22 A V GS = -4 V, pulse width t P limited by Tjmax Note (2) t rr Reverse Recover time 20 ns V GS = -4 V, ISD = 7.5 A, VR = 400 V dif/dt = 600 A/µs, T J = 150 °C Note (2) Q rr Reverse Recovery Charge 47 nC I rrm Peak Reverse Recovery Current 3.4 A Note (2): When using SiC Body Diode the maximum recommended V GS = -4V Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 2.5 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40 |
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