2

C3M0280090J Rev. - , 12-2015

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

Drain-Source Breakdown Voltage

900

V

Gate Threshold Voltage

1.8

2.1

3.5

V

Fig. 11

1.6

V

Zero Gate Voltage Drain Current

1

100

μA

Gate-Source Leakage Current

10

250

nA

Drain-Source On-State Resistance

280

360

mΩ

Fig. 4,

5, 6

385

Transconductance

3.6

S

Fig. 7

3.1

Input Capacitance

150

pF

f = 1 MHz

Fig. 17,

18

Output Capacitance

20

Reverse Transfer Capacitance

2

4.5

μJ

Fig. 16

Turn-On Switching Energy

19

μJ

R

Fig. 26,

29

Note(3)

Turn Off Switching Energy

3.7

Turn-On Delay Time

10.5

ns

Timing relative to V

DS

Inductive load

Fig. 27,

29

Note(3)

Rise Time

6.5

Turn-Off Delay Time

11

Fall Time

4

Internal Gate Resistance

26

Ω

Gate to Source Charge

2.8

nC

Per IEC60747-8-4 pg 21

Fig. 12

Gate to Drain Charge

3.4

Total Gate Charge

9.5

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

Diode Forward Voltage

4.8

V

V

Fig. 8, 9,

10

4.4

V

V

Continuous Diode Forward Current

9

A

V

Note (2)

Diode pulse Current

22

A

V

Note (2)

t

rr

Reverse Recover time

20

ns

V

dif/dt = 600 A/µs, T

Note (2)

Q

rr

Reverse Recovery Charge

47

nC

I

rrm

Peak Reverse Recovery Current

3.4

A

Note (2): When using SiC Body Diode the maximum recommended V

Thermal Characteristics

Symbol

Parameter

Max.

Unit

Test Conditions

Note

Thermal Resistance from Junction to Case

2.5

°C/W

Fig. 21

Thermal Resistance From Junction to Ambient

40