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MKSMF52N20T Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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MKSMF52N20T Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 9 page  KSM52N20 / KSMF52N20T N-Channel MOSFET 200V, 52A, 0.049 Ω Features •RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transis- tors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor correction. TO-220 D G S TO-220F MOSFET Maximum Ratings T C = 25 oC unless otherwise noted Thermal Characteristics Symbol Parameter KSM52N20 KSMF52N20T Units VDSS Drain to Source Voltage 200 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25 oC) 52 52* A -Continuous (TC = 100 oC) 33 33* IDM Drain Current - Pulsed (Note 1) 208 208* A EAS Single Pulsed Avalanche Energy (Note 2) 2520 mJ IAR Avalanche Current (Note 1) 52 A EAR Repetitive Avalanche Energy (Note 1) 35.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25 oC) 357 38.5 W - Derate above 25oC 2.86 0.3 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter KSM52N20 KSMF52N20T Units RθJC Thermal Resistance, Junction to Case 0.35 3.3 oC/W RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 *Drain current limited by maximum junction temperature 2014-7-2 1 www.kersemi.com |
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