1

MCR72-3, MCR72-6,

MCR72-8

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed for industrial and consumer applications such as

temperature, light and speed control; process and remote controls;

warning systems; capacitive discharge circuits and MPU interface.

Uniformity and Stability

Resistance, High Heat Dissipation and Durability

Integrated Circuits

Rating

Symbol

Value

Unit

Peak Repetitive Off–State Voltage(1)

(TJ = *40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

MCR72–3

MCR72–6

MCR72–8

VDRM,

VRRM

100

400

600

Volts

On-State RMS Current

(180

° Conduction Angles; TC = 83°C)

IT(RMS)

8.0

Amps

Peak Non-Repetitive Surge Current

(1/2 Cycle, 60 Hz, TJ = 110°C)

ITSM

100

Amps

Circuit Fusing Considerations

(t = 8.3 ms)

I2t

40

A2s

Forward Peak Gate Voltage

(t

≤ 10 µs, TC = 83°C)

VGM

"5.0

Volts

Forward Peak Gate Current

(t

≤ 10 µs, TC = 83°C)

IGM

1.0

Amp

Forward Peak Gate Power

(t

≤ 10 µs, TC = 83°C)

PGM

5.0

Watts

Average Gate Power

(t = 8.3 ms, TC = 83°C)

PG(AV)

0.75

Watt

Operating Junction Temperature Range

TJ

– 40 to

+110

°C

Storage Temperature Range

Tstg

– 40 to

+150

°C

Mounting Torque

—

8.0

in. lb.

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

SCRs

8 AMPERES RMS

100 thru 600 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MCR72–3

TO220AB

500/Box

www.kersemi.com

K

G

A

TO–220AB

CASE 221A

STYLE 3

1

2

3

4

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

MCR72–6

TO220AB

500/Box

MCR72–8

TO220AB

500/Box

Preferred devices are recommended choices for future use

and best overall value.