PTF080451 datasheet(3/9 Pages) INFINEON

Part #	PTF080451

Description	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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Data Sheet

3 of 9

2004-06-24

PTF080451

Typical Performance (cont.)

All published data at TCASE = 25°C unless otherwise indicated.

Intermodulation Distortion vs. Output Power

(as measured in a broadband circuit)

VDD = 28 V, IDQ = 450 mA, f1 = 959 MHz, f2 = 960 MHz

-80

-70

-60

-50

-40

-30

-20

-10

0

36

38

40

42

44

46

48

Output Power (dBm ), PEP

3rd Order

7th

5th

14

15

16

17

18

860

880

900

920

940

960

Frequency (MHz)

40

50

60

70

80

Output Pow er

Efficiency

Gain

Typical POUT, Gain & Efficiency (at P-1dB)

vs. Frequency

VDD = 28 V, IDQ = 450 mA

IM3 vs. Output Power at Selected Biases

VDD = 28 V, f1 = 959, f2 = 960 MHz

-60

-55

-50

-45

-40

-35

-30

-25

-20

36

38

40

42

44

46

Output Power (dBm), PEP

350 mA

550 mA

450 mA

Broadband Performance

VDD = 28 V, IDQ = 450 mA, POUT = 22.5 W

10

20

30

40

50

60

860

880

900

920

940

960

Frequency (MHz)

-20

-16

-12

-8

-4

0

Gain

Return Loss

Efficiency

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Similar Description - PTF080451

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