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SN74AHCT1G125

SCLS378N – AUGUST 1997 – REVISED JANUARY 2016

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Copyright © 1997–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

7 Specifications

7.1 Absolute Maximum Ratings

(1)

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage range

–0.5

7

V

–0.5

7

V

–0.5

V

Input clamp current

–20

mA

Output clamp current

±20

mA

Continuous output current

±25

mA

±50

mA

Storage temperature range

–65

150

°C

Junction temperature

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

1000

V

Charged device model (CDM), per JEDEC specification JESD22-C101,

1500

(1)

Implications of Slow or Floating CMOS Inputs (SCBA004).

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

4.5

5.5

V

High-level input voltage

2

V

Low-level input voltage

0.8

V

Input voltage

0

5.5

V

Output voltage

0

V

High-level output current

–8

mA

Low-level output current

8

mA

∆t/∆v

Input transition rise or fall rate

20

ns/V

Operating free-air temperature

–40

125

°C