ACT4527

Rev 1, December 28

Innovative Power

TM

- 3 -

www.active-semi.com

Copyright

©

2

0

1

5

A

c

t

i

v

e

-Semi, Inc.

PARAMETER

VALUE

UNIT

IN to GND

-0.3 to 40

V

SW to GND

V

HSB to GND

V

CSP, CSN to GND

-0.3 to +15

V

Junction to Ambient Thermal Resistance

46

°

C

/

W

Operating Junction Temperature

-40 to 150

°

C

Storage Junction Temperature

-55 to 150

°

C

Lead Temperature (Soldering 10 sec.)

300

°

C

All other pins to GND

-0.3 to +6

V

PDC to GND

-0.3 to +6

V



: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may

affect device reliability.

PIN DESCRIPTIONS

PIN

NAME

DESCRIPTION

1

CSP

Voltage Feedback Input. Connect to node of the inductor and output capacitor. CSP

and CSN Kevin sense is recommended.

2

CSN

Negative input terminal of output current sense. Connect to the negative terminal of

current sense resistor.

3

PDC

USB-PD Control Pin. floating: 5.1V, pulled high: 12.1V, pulled low: 9.1V. Do not drive

this pin higher than 5V.

4

NC

No Connection Pin. Must leave this pin floating.

5

NC

No Connection Pin. Must leave this pin floating.

6

IN

Power Supply Input. Bypass this pin with a 10

ì

F ceramic capacitor to GND, placed as

close to the IC as possible.

7

SW

Power Switching Output to External Inductor.

8

HSB

High Side Bias Pin. This provides power to the internal high-side MOSFET gate driver.

Connect a 22nF capacitor from HSB pin to SW pin.

9

GND

Ground and Heat Dissipation Pad. Connect this exposed pad to large ground copper

area with copper and vias.