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STL20DNF06LAG Datasheet(PDF) 5 Page - STMicroelectronics |
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STL20DNF06LAG Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page STL20DNF06LAG Electrical characteristics DocID028242 Rev 1 5/15 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 7.4 A ISDM(1) Source-drain current (pulsed) - 29.6 A VSD(2) Forward on voltage VGS = 0 V, ISD = 7.4 A - 1.5 V trr Reverse recovery time ISD = 7.4 A, di/dt = 100 A/µs, VDD = 48 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 28 ns Qrr Reverse recovery charge - 31.6 nC IRRM Reverse recovery current - 2.26 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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