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IPD04N03LA Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPD04N03LA
Description  OptiMOS 2 Power-Transistor
Download  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD04N03LA Datasheet(HTML) 1 Page - Infineon Technologies AG

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IPD04N03LA IPF04N03LA
IPS04N03LA IPU04N03LA
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
T C=25 °C
2)
50
A
T C=100 °C
50
Pulsed drain current
I D,pulse
T C=25 °C
3)
350
Avalanche energy, single pulse
E AS
I D=40 A, R GS=25 Ω
890
mJ
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage
4)
V GS
±20
V
Power dissipation
P tot
T C=25 °C
115
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V DS
25
V
R DS(on),max (SMD version)
3.8
m
Ω
I D
50
A
Product Summary
Type
IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
Package
P-TO252-3-11
P-TO252-3-23
P-TO251-3-11
P-TO251-3-21
Ordering Code
Q67042-S4177
Q67042-S4197
Q67042-S4243
Q67042-S4198
Marking
04N03LA
04N03LA
04N03LA
04N03LA
Rev. 1.8
page 1
2004-05-19


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