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IPU09N03LA Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPU09N03LA
Description  OptiMOS 2 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPU09N03LA Datasheet(HTML) 1 Page - Infineon Technologies AG

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IPD09N03LA
IPU09N03LA
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
1) for target application
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
T C=25 °C
2)
50
A
T C=100 °C
45
Pulsed drain current
I D,pulse
T C=25 °C
3)
350
Avalanche energy, single pulse
E AS
I D=45 A, R GS=25 Ω
75
mJ
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage
4)
V GS
±20
V
Power dissipation
P tot
T C=25 °C
63
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1) J-STD20 and JESD22
Value
V DS
25
V
R DS(on),max (SMD version)
8.6
m
Ω
I D
50
A
Product Summary
Type
Package
Ordering Code
Marking
IPD09N03LA
P-TO252-3-11
Q67042-S4154
09N03LA
IPU09N03LA
P-TO251-3-21
Q67042-S4155
09N03LA
P-TO251-3-21
P-TO252-3-11
Rev. 1.4
page 1
2004-02-04


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