HYS 72Vxx3xxGR

PC133 Registered SDRAM-Modules

INFINEON Technologies

8

2002-07-18

Absolute Maximum Ratings

DC Characteristics

T

Capacitance

T

Parameter

Symbol

Limit Values

Unit

min.

max.

Input / Output voltage relative to V

SS

V

–1.0

4.6

V

Power supply voltage on V

DD

V

DD

–1.0

4.6

V

Storage temperature range

T

STG

-55

+150

Power dissipation (per SDRAM component)

P

D

–1

W

Data out current (short circuit)

I

OS

–50

mA

Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.

Functional operation should be restricted to recommended operation conditions.

Exposure to higher than recommended voltage for extended periods of time affect device reliability

Parameter

Symbol

Limit Values

Unit

min.

max.

Input High Voltage

V

IH

2.0

V

V

Input Low Voltage

V

IL

–0.5

0.8

V

Output High Voltage (

I

V

OH

2.4

–

V

Output Low Voltage (

I

V

OL

–0.4

V

Input Leakage Current, any input

(0 V <

V

I

I(L)

–10

10

µA

Output Leakage Current

(DQ is disabled, 0 V < V

I

O(L)

–10

10

µA

Parameter

Symbol

Limit Values

Unit

One Bank

Modules

Two Bank

Modules

Input Capacitance

(all inputs except CLK and CKE)

C

IN

10

20

pF

Input Capacitance (CLK)

C

CLK

30

30

pF

Input Capacitance (CKE)

C

CKE

17

30

pF

Input/Output Capacitance(DQ0 - DQ63, CB0 - CB7)

C

IO

10

17

pF

Input Capacitance (SCL, SA0 - 2)

C

SC

88

pF

Input/Output Capacitance (SDA)

C

SD

88

pF