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HYB39S256160DT-7 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part No. HYB39S256160DT-7
Description  256-MBit Synchronous DRAM
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 9 page
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HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Pin Configuration
Data Sheet
9
Rev. 1.02, 2004-02
10072003-13LE-FGQQ
2.2
Package P–TSOPII–54
Figure 1
Pinouts P–TSOPII–54
V
DD VSS
Supply –
Power and Ground
Power and ground for the input buffers and the core logic (3.3 V)
V
DDQ VSSQ
Supply –
Power and Ground for DQs
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
NC
Not Connected
No internal electrical connection is present.
Table 3
Signal Pin Description
Pin
Type
Signal Polarity Function
SPP04126
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
DD
DQ0
A10/AP
A0
A1
A2
A3
V
DD
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
CAS
WE
RAS
CS
BA0
BA1
BA1
BA0
CS
RAS
WE
CAS
N.C.
V
DD
N.C.
V
SSQ
DQ3
N.C.
V
DDQ
DQ2
N.C.
V
SSQ
DQ1
N.C.
V
DDQ
V
DD
A3
A2
A1
A0
A10/AP
DQ0
V
DD
V
DD
BA1
BA0
CS
RAS
WE
CAS
N.C.
V
DD
N.C.
V
SSQ
DQ1
N.C.
V
DDQ
N.C.
N.C.
V
SSQ
DQ0
N.C.
V
DDQ
V
DD
A3
A2
A1
A0
A10/AP
N.C.
V
SS
N.C.
A8
A7
A6
A5
A4
V
SS
V
SSQ
N.C.
DQ3
V
DDQ
N.C.
N.C.
V
SSQ
N.C.
DQ2
V
DDQ
N.C.
V
SS
N.C.
CLK
DQM
CKE
A12
A11
A9
A9
A11
A12
CKE
DQM
CLK
N.C.
V
SS
N.C.
V
DDQ
DQ4
N.C.
V
SSQ
DQ5
N.C.
V
DDQ
DQ6
N.C.
V
SSQ
V
SS
A4
A5
A6
A7
A8
DQ7
V
SS
V
SS
A9
A11
A12
CKE
UDQM
CLK
N.C.
V
SS
DQ8
V
DDQ
DQ9
DQ10
V
SSQ
DQ11
DQ12
V
DDQ
DQ13
DQ14
V
SSQ
V
SS
A4
A5
A6
A7
A8
DQ15
TSOPII-54 (400 mil x 875 mil, 0.8 mm pitch)
64 M x 4
32 M x 8
16 M x 16




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