STFU18N65M2

Electrical ratings

DocID027562 Rev 2

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 25

V

12(1)

A

8(1)

A

IDM(2)

Drain current (pulsed)

48(1)

A

25

W

Insulation withstand voltage (RMS) from all three leads to external heat

2500

V

dv/dt (3)

Peak diode recovery voltage slope

15

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

Storage temperature

- 55 to

150

°C

Max. operating junction temperature

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

5

°C/W

Thermal resistance junction-ambient max

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

2

A

450

mJ