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STE145N65M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STE145N65M5 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 13 page STE145N65M5 Electrical characteristics DocID025538 Rev 2 7/13 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Switching losses vs gate resistance The previous figure Eon includes reverse recovery of a SiC diode. C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss 10000 100000 f=1 MHz |
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